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10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 1 16 nov. 2015 / revision 4 parameter symbol value unit a condition collector-emitter voltage v ces 650 v collector current i c t j = t jmax t s =80 c 83 repetitive peak collector current i crm t p limited by t jmax 450 a total power dissipation p tot t j = t jmax t s =80 c 128 w gate-emitter voltage v ges 20 v maximum junction temperature t jmax 175 c buck switch\ out. boost switch maximum ratings t j =25c, unless otherwise specified flow npc 1 650 v / 150 a npc inverter topology optimized for full rated bi-directional usage (4 quadrant operation) high-speed igbt in all switch positions ntc low inductive design with integrated dc capacitor flow 1 12mm package solder pin press-fit solar inverter ups 10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y flow 1 12mm housing schematic features target applications types
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 2 16 nov. 2015 / revision 4 symbol value unit t p = 60s 2500 v t p = 2s 6000 v min 12,7 mm 8,07 \ 7,86 mm cti >200 v i sol solder pin \ press-fit ac voltage rms dc voltage creepage distance clearance comparative tracking index isolation voltage thermal properties storage temperature operation junction temperature isolation properties c c t stg -40+125 t jop -40+( t jmax - 25) conditions parameter parameter symbol unit maximum dc voltage v max 500 v operation temperature t op -55+125 c conditions value module properties dc link capacitor buck diode\ out. boost diode out. boost inverse diode parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 300 a continuous (direct) forward current i f t j = t jmax t s = 80c 106 a total power dissipation p tot t j = t jmax t s = 80c 149 w maximum junction temperature t jmax 175 c parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 300 a continuous (direct) forward current i f t j = t jmax t s = 80c 87 a total power dissipation p tot t j = t jmax t s = 80c 113 w maximum junction temperature t jmax 175 c
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 3 16 nov. 2015 / revision 4 buck switch 25 48 125 46 150 46 25 11 125 12 150 13 25 133 125 152 150 156 25 7 125 7 150 8 q rfwd = 3,8 c 25 0,737 q rfwd = 7,1 c 125 1,118 q rfwd = 8,1 c 150 1,210 25 0,367 125 0,706 150 0,798 mws turn-off energy (per pulse) e off 89 ns 350 turn-on energy (per pulse) e on igbt switching t d(off) fall time t f rise time t r r gon = 2 ? turn-off delay time turn-on delay time t d(on) r goff = 2 ? 15 characteristic values 25 3,3 4 4,7 125 25 1,70 2,22 125 1,88 150 1,93 25 80 125 25 240 125 0,74 k/w thermal thermal resistance junction to sink r th(j-s) phase-change material ? =3,4w /mk 150 25 332 nc reverse transfer capacitanc e c res 32 gate charge q g 15 520 25 8600 pf output c apacitanc e c oes 150 none ? input c apacitanc e c ies f=1 mhz 0 25 internal gate resistanc e r g a gate-emitter leakage current i ges 20 0 na collector-emitter c ut-off c urrent i ces 0 650 static v ge [v] v ce [v] i c [a] v collector-emitter saturation voltage v cesat 15 150 v gate-emitter threshold voltage v ge(th) v ge = v ce 0,0015 parameter symbol conditions value unit t j [ c] min typ max
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 4 16 nov. 2015 / revision 4 25 1,67 1,77 125 1,67 150 1,66 25 7,6 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 150 v reverse leakage current i r 650 a forward voltage v f thermal thermal resistanc e junction to sink r th(j-s) phase-change material ? =3,4w/mk k/w 0,84 25 110 125 143 150 151 25 52 125 85 150 96 d i /d t = 7000 a/s 25 3,795 d i /d t = 7124 a/s 125 7,081 d i /d t = 6971 a/s 150 8,085 25 0,853 125 1,613 150 1,849 25 2642 125 2119 150 2131 q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s fwd switching peak recovery current i rrm 15 350 89 a reverse recovery time t rr ns recovered charge buck diode
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 5 16 nov. 2015 / revision 4 25 50 125 51 150 50 25 11 125 13 150 14 25 114 125 134 150 139 25 5 125 7 150 9 q rfwd = 3,6 c 25 1,100 q rfwd = 6,9 c 125 1,773 q rfwd = 7,9 c 150 1,921 25 0,243 125 0,621 150 0,719 rise time t r r gon = 2 ? turn-off delay time turn-on delay time t d(on) r goff = 2 ? 15 igbt switching t d(off) fall time t f mws turn-off energy (per pulse) e off 89 ns 350 turn-on energy (per pulse) e on out. boost switch 25 3,3 4 4,7 125 25 1,70 2,22 125 1,88 150 1,93 25 80 125 25 240 125 0,74 k/w thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w /mk 150 25 332 nc reverse transfer capac itance c res 32 gate c harge q g 15 520 25 8600 pf output capacitance c oes 150 none ? input capacitance c ies f=1 mhz 0 25 internal gate resistance r g a gate-emitter leakage c urrent i ges 20 0 na collec tor-emitter c ut-off current i ces 0 650 static v ge [v] v ce [v] i c [a] v collec tor-emitter saturation voltage v cesat 15 150 v gate-emitter threshold voltage v ge(th) v ge = v ce 0,0015 parameter symbol conditions value unit t j [ c] min typ max
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 6 16 nov. 2015 / revision 4 25 1,67 1,77 125 1,67 150 1,66 25 7,6 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 150 v reverse leakage current i r 650 a forward voltage v f thermal thermal resistanc e junction to sink r th(j-s) phase-change material ? =3,4w/mk k/w 0,84 out. boost diode 25 90 125 117 150 121 25 61 125 97 150 109 d i /d t = 5600 a/s 25 3,603 d i /d t = 6000 a/s 125 6,937 d i /d t = 5796 a/s 150 7,941 25 0,692 125 1,331 150 1,529 25 1618 125 1020 150 864 fwd switching peak recovery current i rrm 15 350 89 a reverse recovery time t rr ns recovered charge q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s out. boost inverse diode 25 1,85 2 125 150 1,66 25 1,8 150 i f [a] parameter symbol conditions value unit v r [v] static t j [c] min typ max 150 v reverse leakage c urrent i r 650 a forward voltage v f thermal thermal resistance junc tion to sink r th(j-s) phase-c hange material ? =3,4w/mk k/w 0,64
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 7 16 nov. 2015 / revision 4 300 nf capacitance c t j [c] min typ max -10 parameter symbol conditions value unit tolerance % +10 parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max f vincotech ntc reference power dissipation constant power dissipation p b-value b (25/100) b-value b (25/50) k 25 3,5 mw/k 25 3884 25 3964 k 25 21,5 k? +4,5 % 210 100 -4,5 25 mw rated resistance r deviation of r100 r/r r100=1486 ? conditions value dc link capacitor thermistor
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 8 16 nov. 2015 / revision 4 buck switch\ out. boost switch characteristics typical output characteristics igbt typical output characteristics igbt i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v t j : 125 c t j = 150 c 150 c v ge from 8 v to 17 v in steps of 1 v typical transfer characteristics igbt transient thermal impedance as function of puls e duration igbt i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 10 v t j : 125 c r th(j-s) = 0,74 k/w 150 c r th (k/w) (s) 1,09e-01 1,94e+00 2,21e-01 2,60e-01 2,87e-01 6,98e-02 8,43e-02 8,29e-03 3,94e-02 3,67e-04 igbt thermal model values 0 30 60 90 120 150 0 1 2 3 4 5 6 7 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 100 200 300 400 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 100 200 300 400 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 1 10 2 10 -2 10 -1 10 0
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 9 16 nov. 2015 / revision 4 gate voltage vs gate charge igbt safe operating area igbt v ge = f( q g ) i c = f( v ce ) at at i c = 150 a d = single pulse t h = 80 oc v ge = 15 v t j = t jmax oc 130v 520v 0 2,5 5 7,5 10 12,5 15 0 50 100 150 200 250 300 350 400 v v v v g e g e g e g e (v) q qq q g gg g (nc) 0,1 1 10 100 1000 1 10 100 1000 i i i i c cc c (a) v vv v c e c ec e c e (v) buck switch\ out. boost switch characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 10 16 nov. 2015 / revision 4 typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 0,84 k/w 150 c fwd thermal model values r (k/w) (s) 6,09e-02 4,33e+00 1,45e-01 8,74e-01 3,25e-01 1,39e-01 2,06e-01 4,67e-02 8,27e-02 9,15e-03 2,35e-02 1,16e-03 0 50 100 150 200 250 300 350 400 450 0 1 2 3 4 5 i f (a) v f (v) z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 buck diode\ out. boost diode characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 11 16 nov. 2015 / revision 4 typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 0,64 k/w 150 c fwd thermal model values r (k/w) (s) 6,14e-02 3,48e+00 1,03e-01 5,85e-01 2,81e-01 9,46e-02 1,21e-01 2,14e-02 4,83e-02 5,07e-03 2,26e-02 5,92e-04 0 100 200 300 400 500 0 1 2 3 4 5 i f (a) v f (v) z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 thermistor thermistor typical temperature characteristic typical thermistor resistance values typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r (?) t (c) ntc-typical temperature characteristic out. boost inverse diode characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 12 16 nov. 2015 / revision 4 figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unct ion of co llect or current typical switching energy losses as a f unct ion of ga t e resist or e = f( i c ) e = f(r g ) with an inductive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v 150 c v ge = 15 v 150 c r gon = 2 ? i c = 89 a r goff = 2 ? figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unct ion of collect or current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an inductive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v 150 c v ge = 15 v 150 c r gon = 2 ? i c = 89 a e rec e rec e rec 0 0,5 1 1,5 2 2,5 3 10 30 50 70 90 110 130 150 170 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec e rec 0 0,5 1 1,5 2 0 1 2 3 4 5 6 7 8 9 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) ) e ee e o n o n o n o n e on e on e ee e off off off off e off e off 0 0,5 1 1,5 2 10 30 50 70 90 110 130 150 170 e e e e ( mws) ( mws) ( mws) ( mws) i ii i c c c c (a) (a)(a) (a) e off e on e o n o n o n o n e off e on e o ff o ffo ff o ff 0 0,5 1 1,5 2 2,5 0 2 4 6 8 10 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) buck switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 13 16 nov. 2015 / revision 4 figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collect or current typical switching t imes as a f unct ion of gat e resis t or t = f( i c ) t = f( r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 2 ? i c = 89 a r goff = 2 ? figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unct ion of coll ect or current typical reverse recovery time as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? 150 c i c = 89 a 150 c t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 10 30 50 70 90 110 130 150 170 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 1 2 3 4 5 6 7 8 9 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr t rr 0 0,03 0,06 0,09 0,12 0 1 2 3 4 5 6 7 8 9 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) t rr t rr t rr 0 0,03 0,06 0,09 0,12 10 30 50 70 90 110 130 150 170 t t t t rr rr rr rr ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a) buck switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 14 16 nov. 2015 / revision 4 figure 9. fwd figure 10. fwd typical recovered charge as a f unct ion of collect or current typical recoved charge as a f unction of igbt turn o n gat e resist or q r = f( i c ) q r = f( r gon ) at at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? 150 c i c = 89 a 150 c figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unction of collector current typical peak reverse recovery current as a f unct ion of igbt t urn on gat e resistor i rm = f( i c ) i rm = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? 150 c i c = 89 a 150 c i rm i rm i rm 0 40 80 120 160 0 1 2 3 4 5 6 7 8 9 i i i i r m r m r m r m (a) (a) (a) (a) r rr r go n go n go n go n ( (( ( ) )) ) q qq q r r r r q r q r 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 q q q q r rr r (c) (c) (c) (c) r rr r g on g on g on g on ( (( ( ) )) ) i ii i rm rmrm rm i rm i rm 0 50 100 150 200 10 30 50 70 90 110 130 150 170 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r q r 0 3 6 9 12 10 30 50 70 90 110 130 150 170 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a) buck switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 15 16 nov. 2015 / revision 4 figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unct ion of igbt t urn on gate resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? 150 c i c = 89 a 150 c 0 3000 6000 9000 12000 0 2 4 6 8 10 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 2000 4000 6000 8000 10000 10 30 50 70 90 110 130 150 170 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operat ing area i c = f( v ce ) at t j = 175 c r gon = 2 ? r goff = 2 ? 0 50 100 150 200 250 300 350 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c module module module module i i i i c cc c chip chip chip chip buck switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 16 16 nov. 2015 / revision 4 without internal capacitor t j 125 c r gon 2 ? r goff 2 ? figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of tdof f , teof f (t eof f = int egrating t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of t don, t eon (teon = int egrat ing t ime f or eon) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 20 v v ge (100%) = 20 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 89 a i c (100%) = 89 a t doff = 0,152 s t don = 0,046 s t eoff = 0,177 s t eon = 0,124 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of tf turn-on swit ching wavef orms & def init ion of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 89 a i c (100%) = 89 a t f = 0,007 s t r = 0,012 s = general conditions == i c 1% v ce 90% v ge 90% -50 0 50 100 150 200 -0,01 0,04 0,09 0,14 0,19 0,24 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -100 0 100 200 300 2,98 3,02 3,06 3,1 3,14 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 150 0,12 0,14 0,16 0,18 0,2 0,22 % t tt t (s) (s)(s) (s) v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 300 3,04 3,055 3,07 3,085 3,1 3,115 % t tt t (s) (s)(s) (s) t r v ce i c buck switching definition
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 17 16 nov. 2015 / revision 4 figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of teof f turn-on swit ching wavef orms & def init ion of t eon p off (100%) = 31,16 kw p on (100%) = 31,16 kw e off (100%) = 0,71 mj e on (100%) = 1,12 mj t eoff = 0,18 s t eon = 0,12 s figure 7. fwd turn-of f swit ching wavef orms & def inition of t rr v d (100%) = 350 v i d (100%) = 89 a i rrm (100%) = -143 a t rr = 0,085 s i c 1% v ge 90% -25 0 25 50 75 100 125 -0,01 0,04 0,09 0,14 0,19 0,24 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 2,99 3,02 3,05 3,08 3,11 3,14 % t tt t (s) (s)(s) (s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -200 -150 -100 -50 0 50 100 150 3,03 3,06 3,09 3,12 3,15 3,18 % t tt t (s) (s)(s) (s) i d v d fitted buck switching definition
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 18 16 nov. 2015 / revision 4 figure 8. fwd figure 9. fwd turn-on switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 89 a p rec (100%) = 31,16 kw q rr (100%) = 7,08 c e rec (100%) = 1,61 mj t qrr = 0,17 s t erec = 0,17 s t qrr -200 -150 -100 -50 0 50 100 150 3,03 3,09 3,15 3,21 3,27 % t tt t (s) (s)(s) (s) i d q rr -25 0 25 50 75 100 125 3,03 3,09 3,15 3,21 3,27 % t tt t (s) (s)(s) (s) p rec e rec t erec buck switching definition
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 19 16 nov. 2015 / revision 4 figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unct ion of co llect or current typical switching energy losses as a f unct ion of ga t e resist or e = f( i c ) e = f(r g ) with an inductive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v v ge = 15 v r gon = 2 ? i c = 90 a r goff = 2 ? figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unct ion of collect or current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an inductive load at 25 c with an inductive load at 25 c v ce = 350 v t j : 125 c v ce = 350 v t j : 125 c v ge = 15 v v ge = 15 v r gon = 2 ? i c = 90 a e rec e rec 0 0,5 1 1,5 2 2,5 10 30 50 70 90 110 130 150 170 e e e e ( mws) ( mws) ( mws) ( mws) i ii i c c c c (a) (a)(a) (a) e rec e rec 0 0,4 0,8 1,2 1,6 2 0 1 2 3 4 5 6 7 8 9 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) e ee e on on on on e on e ee e off off off off e off 0 0,5 1 1,5 2 2,5 10 30 50 70 90 110 130 150 170 e e e e ( mws) ( mws) ( mws) ( mws) i ii i c c c c (a) (a)(a) (a) e off e on e on on on on e off offoff off 0 0,5 1 1,5 2 2,5 0 1 2 3 4 5 6 7 8 9 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) out. boost switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 20 16 nov. 2015 / revision 4 figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collect or current typical switching t imes as a f unct ion of gat e resis t or t = f( i c ) t = f( r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 2 ? i c = 90 a r goff = 2 ? figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unct ion of coll ect or current typical reverse recovery time as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? i c = 90 a t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 10 30 50 70 90 110 130 150 170 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 1 2 3 4 5 6 7 8 9 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr 0 0,04 0,08 0,12 0,16 0 1 2 3 4 5 6 7 8 9 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) t rr t rr 0 0,04 0,08 0,12 0,16 10 30 50 70 90 110 130 150 170 t t t t rr rr rr rr ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a) out. boost switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 21 16 nov. 2015 / revision 4 figure 9. fwd figure 10. fwd typical recovered charge as a f unct ion of collect or current typical recoved charge as a f unction of igbt turn o n gat e resist or q r = f( i c ) q r = f( r gon ) at at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? i c = 90 a figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unction of collector current typical peak reverse recovery current as a f unct ion of igbt t urn on gat e resistor i rm = f( i c ) i rm = f( r gon ) a t v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? i c = 90 a i rm i rm 0 40 80 120 160 0 1 2 3 4 5 6 7 8 9 i i i i r m r m r m r m (a) (a) (a) (a) r rr r go n go n go n go n ( (( ( ) )) ) q qq q r r r r q r 0 2 4 6 8 0 1 2 3 4 5 6 7 8 9 q q q q r rr r (c) (c) (c) (c) r rr r g on g on g on g on ( (( ( ) )) ) i ii i rm rmrm rm i rm 0 40 80 120 160 10 30 50 70 90 110 130 150 170 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r 0 3 6 9 12 10 30 50 70 90 110 130 150 170 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a) out. boost switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 22 16 nov. 2015 / revision 4 figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rat e of f all of f orward and reverse recovery curre nt as a f unct ion of igbt t urn on gate resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 350 v 25 c at v ce = 350 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 2 ? i c = 90 a 0 2000 4000 6000 8000 10000 0 2 4 6 8 10 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 2000 4000 6000 8000 10000 10 30 50 70 90 110 130 150 170 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operat ing area i c = f( v ce ) at t j = 175 c r gon = 2 ? r goff = 2 ? 0 50 100 150 200 250 300 350 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c module module module module i i i i c cc c chip chip chip chip out. boost switching characteristics
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 23 16 nov. 2015 / revision 4 without internal capacitor t j 125 c r gon 2 ? r goff 2 ? figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of tdof f , teof f (t eof f = int egrating t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of t don, t eon (teon = int egrat ing t ime f or eon) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 20 v v ge (100%) = 20 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 90 a i c (100%) = 90 a t doff = 0,149 s t don = 0,045 s t eoff = 0,166 s t eon = 0,134 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of tf turn-on swit ching wavef orms & def init ion of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 90 a i c (100%) = 90 a t f = 0,006 s t r = 0,014 s = general conditions == i c 1% v ce 90% v ge 90% -50 0 50 100 150 200 -0,02 0,03 0,08 0,13 0,18 0,23 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -100 0 100 200 300 2,98 3,02 3,06 3,1 3,14 3,18 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -50 0 50 100 150 200 0,11 0,13 0,15 0,17 0,19 % t tt t (s) (s)(s) (s) v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,02 3,032 3,044 3,056 3,068 3,08 % t tt t (s) (s)(s) (s) t r v ce i c out. boost switching definition
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 24 16 nov. 2015 / revision 4 figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of teof f turn-on swit ching wavef orms & def init ion of t eon p off (100%) = 31,58 kw p on (100%) = 31,58 kw e off (100%) = 0,69 mj e on (100%) = 1,17 mj t eoff = 0,17 s t eon = 0,13 s figure 7. fwd turn-of f swit ching wavef orms & def inition of t rr v d (100%) = 350 v i d (100%) = 90 a i rrm (100%) = -122 a t rr = 0,089 s i c 1% v ge 90% -25 0 25 50 75 100 125 -0,01 0,04 0,09 0,14 0,19 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 2,97 3,01 3,05 3,09 3,13 % t tt t (s) (s)(s) (s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3,03 3,07 3,11 3,15 3,19 % t tt t (s) (s)(s) (s) i d v d fitted out. boost switching definition
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 25 16 nov. 2015 / revision 4 figure 8. fwd figure 9. fwd turn-on switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 90 a p rec (100%) = 31,58 kw q rr (100%) = 6,75 c e rec (100%) = 1,65 mj t qrr = 0,18 s t erec = 0,18 s t qrr -150 -100 -50 0 50 100 150 3,02 3,07 3,12 3,17 3,22 3,27 % t tt t (s) (s)(s) (s) i d q rr -25 0 25 50 75 100 125 3,02 3,07 3,12 3,17 3,22 3,27 % t tt t (s) (s)(s) (s) p rec e rec t erec out. boost switching definition
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 26 16 nov. 2015 / revision 4 date code ul & vinco lot serial wwyy ul vinco lllll ssss type lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 52,2 6,9 ntc1 2 52,2 0 ntc2 3 36,2 6,75 e37 4 33,2 7,9 g3 5 33,2 4,9 g7 6 9,2 5,75 e48 7 6,2 6,9 g4 8 6,2 3,9 g8 9 2,7 0 dc- 10 0 0 dc- 11 2,7 2,7 dc- 12 0 2,7 dc- 13 2,7 5,4 dc- 14 0 5,4 dc- 15 2,7 12,75 gnd 16 0 12,75 gnd 17 2,7 15,45 gnd 18 0 15,45 gnd 19 2,7 22,8 dc+ 20 0 22,8 dc+ 21 2,7 25,5 dc+ pin x y function 22 0 25,5 dc+ 30 46 24 g2 23 2,7 28,2 dc+ 31 52,2 20,1 out 24 0 28,2 dc+ 32 49,5 22,8 out 25 18,3 22,45 e15 33 52,2 22,8 out 26 21,3 21,3 g5 34 49,5 25,5 out 27 21,3 24,3 g1 35 52,2 25,5 out 28 43 22,15 e26 36 49,5 28,2 out 29 46 21 g6 37 52,2 28,2 out ordering code 10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y version without thermal paste 12mm housing with solder pins without thermal paste 12mm housing with press-fit p ins pin table [mm] ordering code & marking name n n -n n n n n n n n n n n n n n -t t t t t t t v v outline pin table[mm] text datamatrix nn-nnnnnnnnnnnnnn tttttttvv wwyy ul vinco lllll ssss
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 27 16 nov. 2015 / revision 4 buck diode out. boost switch out. boost diode out. boost inverse diode dc link capacitor thermistor comment 75a -- fwd 650v ntc 500v id d13,d14,d17,d18 rt igbt fwd component c1,c2 capacitor d43,d44,d47,d48 fwd 650v - 75a 75a identification t13,t14,t17,t18 igbt 650v pinout t11,t12,t15,t16 d11, d12 650v 650v voltage current 75a 150a function buck switch
10-FY07NPA150SM02-L365F08 10-py07npa150sm02-l365f08y datasheet copyright vincotech 28 16 nov. 2015 / revision 4 standard packaging quantity (spq) sample handling instruction 100 >spq standard 10-FY07NPA150SM02-L365F08-d4-14 16 nov. 2015 document no.: date: modification: added press-fit option

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